| PART |
Description |
Maker |
| HSDL-1100008 HSDL-1100018 HSDL-1100007 HSDL-110001 |
IrDA 1.1 Compliant 4Mb/s 5V Transceiver. Top Option.Tape & ReelLINot Recommended for New Designs)
IrDA 1.1Compliant 4Mb/s 5V Transceiver. Top Opt. 10 units/stripLINot Recommended for New Designs)
IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Option.Tape & Reel＜LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Option.Tape
IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Opt.10 units/strip＜LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Opt.10单位/条\u0026lt;LI\u0026gt;（不推荐用于新设计）
|
Ecliptek, Corp.
|
| GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM
12ns 256K x 18 4Mb sync burst SRAM
8.5ns 256K x 18 4Mb sync burst SRAM
8ns 256K x 18 4Mb sync burst SRAM
10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
| M29DW324DB70ZA6 M29DW324DB70ZA6F M29DW324DB70ZE6F |
CABLE ASSEMBLY; LEAD-FREE SOLDER; N MALE TO N FEMALE; 50 OHM, RG225/U COAX, DOUBLE SHIELDED
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双66分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双66分，启动3V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双1616分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory
|
SGS Thomson Microelectronics
意法半导
STMicroelectronics N.V.
ST Microelectronics
|
| HSDL-3602-007 HSDL-3602-008 HSDL-3602-037 HSDL-360 |
HSDL-3602-007 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
HSDL-3602-008 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
HSDL-3602-037 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
HSDL-3602-038 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
|
Agilent (Hewlett-Packard)
|
| M58WR064EB M58WR064ET M58WR064E-ZBT M58WR064ET80ZB |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
HDR P R 4P PW N 1X4 .100TQ
BERGSTRIP .100CC SR STRAIGHT
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
|
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| GS74104ATP-10 GS74104AJ-10I GS74104AGJ-10 GS74104A |
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO44
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO32
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO32
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO44
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 8 ns, PDSO44
|
GSI Technology, Inc.
|
| M28W640C-ZBT M28W640CT90ZB6T M28W640CB80ZB1T M28W6 |
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，启动块3V电源快闪记忆
64 Mbit 4Mb x16/ Boot Block 3V Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
|
| CG6258AM |
4Mb (256K x 16) Pseudo Static RAM
|
WEIDA[Weida Semiconductor, Inc.]
|
| EDI2GG464128V EDI2GG464128V10D EDI2GG464128V11D ED |
4MB SYNCHRONOUS CARD EDGE DIMM
|
White Electronic Designs Corporation
|
| IS61NVF12836A-6.5B2 IS61NVF12836A-6.5B2I IS61NLF25 |
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 6.5 ns, PBGA119
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 7.5 ns, PBGA165
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 6.5 ns, PQFP100
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 7.5 ns, PBGA119
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 7.5 ns, PQFP100
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|
